Experimentation < Experiments < Exploration

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List of bibliographic references

Number of relevant bibliographic references: 99.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000B03 (2004)		Optimization of InP-InGaAs HPT gain: Design of an opto-microwave monolithic amplifier
000B11 (2004)		Multi-layer microstrip antennas on quartz substrates: Technological considerations and performances at 60 GHz
000B23 (2004)		Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
000B39 (2004)		InAlAs-InGaAs double-gate HEMTs on transferred substrate
000B75 (2004)		Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
000B78 (2004)		Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000B95 (2004)		9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000C72 (2003)		Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
000C84 (2003)		Synthesis of indium and indium oxide nanoparticles from indium cyclopentadienyl precursor and their application for gas sensing
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000D52 (2003)		InAs/AlSb quantum cascade lasers operating at 6.7 μm
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
000D90 (2003)		Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000E01 (2003)		Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
000F52 (2002)		Optical packet switching with lossless 16-channel InP monolithically integrated wavelength selector module
000F88 (2002)		Lightwave single sideband wavelength self-tunable filter using an InP:Fe crystal for fiber-wireless systems
001004 (2002)		High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001006 (2002)		High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001025 (2002)		Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

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