Excited state < Excited states < Exciton

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List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000015 (2013)		The role of heavy-light-hole mixing on the optical initialization of hole spin in InAs quantum dots
000023 (2013)		Spatial modulation of above-the-gap cathodoluminescence in InP nanowires
000259 (2010)		Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser
000358 (2010)		Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
000382 (2009)		Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000397 (2009)		Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
000412 (2009)		Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000446 (2009)		High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications
000529 (2008)		Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots
000610 (2007)		Yb3+-Doped CaF2 Cubic Fluoride Crystal : Spectroscopic Properties, Concentration Quenching Analysis and Laser Optimization
000657 (2007)		Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000670 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000786 (2006)		Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm
000788 (2006)		Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000873 (2005)		The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots
000941 (2005)		Kinetics of photoinduced changes in Ag nanoparticles deposited on an indium tin oxide surface
000A47 (2004-01-15)		Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
000B09 (2004)		Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O2 annealing effects
000C50 (2003-03-24)		Simultaneous two-state lasing in quantum-dot lasers
000E22 (2002-11-15)		Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)

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