List of bibliographic references
Number of relevant bibliographic references: 135.
[0-20] [
0 - 20][
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20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000025 (2013) |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE |
| 000106 (2012) |
| Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires |
| 000113 (2012) |
| Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate |
| 000115 (2012) |
| Investigation of indium nitride for micro-nanotechnology |
| 000155 (2011) |
| The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates |
| 000172 (2011) |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth |
| 000197 (2011) |
| MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides |
| 000212 (2011) |
| Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds |
| 000273 (2010) |
| Recent advances in the MOVPE growth of indium nitride |
| 000297 (2010) |
| Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content |
| 000411 (2009) |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys |
| 000417 (2009) |
| Monolithic integration of InP-based transistors on Si substrates using MBE |
| 000430 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
| 000434 (2009) |
| Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) |
| 000449 (2009) |
| Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison |
| 000522 (2008) |
| Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4 |
| 000629 (2007) |
| Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence x-ray techniques |
| 000679 (2007) |
| Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE |
| 000702 (2007) |
| Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers |
| 000763 (2006) |
| Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces |
| 000876 (2005) |
| Terahertz investigation of high quality indium nitride epitaxial layers |
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