Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 161.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000007 (2013) Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation
000034 (2013) Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell
000042 (2013) Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000043 (2013) Modeling of Dark Current in HgCdTe Infrared Detectors
000045 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000093 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000135 (2012) Defect and phase stability of solid solutions of Mg2X with an antifluorite structure: An ab initio study
000140 (2012) Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device
000171 (2011) Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition
000194 (2011) Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes
000208 (2011) Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission
000213 (2011) High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering
000285 (2010) Performance and defects in phosphorescent organic light-emitting diodes
000289 (2010) Optical properties of InN grown on Si(111) substrate
000297 (2010) Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
000309 (2010) In-clustering effects in InAlN and InGaN revealed by high pressure studies
000324 (2010) Electronic transport and optical properties of thin oxide films
000349 (2010) Characterization of (In1-xAlx)2S3 thin films grown by co-evaporation
000354 (2010) Band-Gap Determination of the Native Oxide Capping Quantum Dots by Use of Different Kinds of Conductive AFM Probes: Example of InAs/GaAs Quantum Dots
000378 (2009) Thickness dependent physical properties of close space evaporated In2S3 films

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