Electronics packaging < Electrons < Electrooptical absorption

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000596 (2008)		Characterization of thin InP anodic oxide layers : Correlation of morphological investigations with chemical and electrical properties
001396 (2000)		Recombination centers in electron irradiated GaInP : application to the degradation of space solar cells
001F61 (1996)		Deep levels in Au-POxNyHz-(n)InP MIS structures
002046 (1995-06)		Structure de défauts dans InP irradié caractérisée par annihilation du positon
002710 (1993)		Defects in electron irradiated GaInP
002B22 (1990)		Optical properties of the main electron-irradiation-induced defects in p-type InP : comparison with calculations for the isolated and acceptor-paired phosphorus vacancy
002B69 (1990)		Electronic properties of Ga(In)As-based heterostructures
002B87 (1990)		Characterisation of semi-insulating InP:Fe
002B91 (1990)		Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: defect transformation (H4-E11)→H′4
002B94 (1990)		Amorphous-crystalline phase transformation of supported aggregates produced by indium deposition
002C53 (1989)		Modifications of InP(110) surfaces induced by electron beam during Auger measurement
002C70 (1989)		Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: a charge-controlled bistable model
002D54 (1988)		Positron lifetime measurements in as-grown and electron irradiated InSb
002E77 (1987)		Study of static atomic displacements by channelled-electron-beam-induced X-ray emission : Application to In0,53Ga0.47 As alloys
003006 (1986)		Origin of the main deep electron trap in electron irradiated InP
003009 (1986)		Luminescence of heavily electron irradiated InP
003011 (1986)		Lattice coupling strength of electron-induced-irradiated defects in InP
003030 (1986)		EElectric field dependence of local-defect reactions in semiconductors
003049 (1986)		A study of deep levels by transient spectroscopy on p-type liquid-phase-epitaxial GaxIn1-xAsyP1-y grown on semi-insulating InP
003052 (1986)		A model of deep centers formation and reactions in electron irradiated InP
003089 (1984)		Calcul par la méthode de Monte Carlo des profils de dépôts d'énergie de faisceaux d'électrons pulsés dans InP

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