Electron microscopy < Electron mobility < Electron molecule collision

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
000028 (2013)		Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000160 (2011)		Terahertz Imaging with InP High-electron-mobility Transistors
000189 (2011)		On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
000226 (2011)		Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000446 (2009)		High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications
000525 (2008)		Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
000527 (2008)		On the improvement of the electroluminescent signal of organic light emitting diodes by the presence of an ultra-thin metal layer at the interface organic/ITO
000530 (2008)		Non-Fermi liquid behavior in the magnetotransport of quasi two-dimensional heavy Fermion compounds CeMIn5
000576 (2008)		Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000598 (2008)		Ballistic nanodevices for high frequency applications
000650 (2007)		Non-fermi liquid behavior in the magnetotransport of CeMIn5(M: Co and Rh) : Striking similarity between quasi two-dimensional heavy fermion and high-Tc cuprates
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000730 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000804 (2006)		Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000A39 (2004-03-29)		Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000B78 (2004)		Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000E66 (2002-05)		Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions
001071 (2001-10-15)		Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2
001513 (1999-11-29)		Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates
001624 (1999)		HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x

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