Electron device manufacture < Electron diffraction < Electron donor

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000157 (2011)		The high sensitivity of InN under rare earth ion implantation at medium range energy
000707 (2007)		Convergent beam electron diffraction for strain determination at the nanoscale
000943 (2005)		Interfacial structure of MBE grown InN on GaN
000A11 (2005)		Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells
000A79 (2004)		Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films
000B54 (2004)		Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
000F22 (2002)		Stable icosahedral quasicrystals in the Ag-In-Ca, Ag-In-Yb, Ag-In-Ca-Mg and Ag-In-Yb-Mg systems
000F34 (2002)		Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films
001241 (2001)		Growth of bulk and superlattice GaAsSb layers on InP
001468 (2000)		Deformations induced by a Vickers indentor in InP at room temperature
001856 (1998-07)		Soft x-ray photoelectron diffraction study of epitaxial InGaAs/GaAs(001)
001962 (1998)		Optical properties of InS layers deposited using an airless spray technique
001C24 (1997)		Photoelectron diffraction investigation of strained InGaAs grown on (001) GaAs
001F25 (1996)		Incommensurate modulated disorder in Ba0.85Ca2.15In6O12
002168 (1995)		InSe/GaSe hterointerfaces prepared by Van der Waals epitaxy
002198 (1995)		Crystal growth, characterization and crystal structure of CdIn2Te4
002314 (1994-02)		Phénomènes de surface en croissance épitaxiale fortement contrainte de InxGa1-xAs (x>0,25) sur GaAs(001): relaxation élastique, transition 2D-3D, effet surfactant
002319 (1994-01-31)		Epitaxial growth of cadmium sulfide layers on indium phosphide from aqueous ammonia solutions
002339 (1994)		X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In2Se3 thin films grown by molecular beam deposition
002669 (1993)		Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature
002721 (1993)		Chemical-shift low-energy photoelectron diffraction : a determination of the InP(110) clean surface structural relaxation

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