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Serveur d'exploration sur l'Indium - Analysis (France)

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Electron delocalization < Electron density < Electron device manufacture  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000032 (2013) Persistent enhancement of the carrier density in electron irradiated InAs nanowires
000294 (2010) Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
000E71 (2002-04-01) Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
001071 (2001-10-15) Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2
001306 (2000-11-01) Photoconductance measurements on thin InGaN layers
001546 (1999-08-01) Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001843 (1998-07-15) Interface quality and electron transfer at the GaInP on GaAs heterojunction
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001B16 (1997-06-15) Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measurements under pressure
001E28 (1996-02-15) Weak antilocalization and spin precession in quantum wells
002194 (1995) Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model
002B14 (1990) Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction

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