Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Electrical characteristic »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Electrical activity < Electrical characteristic < Electrical conductance  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 69.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000050 (2013) Influence of Mo back contact porosity on co-evaporated Cu(In,Ga)Se2 thin film properties and related solar cell
000061 (2013) Epitaxial undoped indium oxide thin films: Structural and physical properties
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000137 (2012) Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
000138 (2012) Comparison of ITO/metal/ITO and ZnO/metal/ZnO characteristics as transparent electrodes for third generation solar cells
000142 (2012) A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
000294 (2010) Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
000333 (2010) Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
000354 (2010) Band-Gap Determination of the Native Oxide Capping Quantum Dots by Use of Different Kinds of Conductive AFM Probes: Example of InAs/GaAs Quantum Dots
000371 (2009) Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
000376 (2009) Transparent electrochemical capacitor based on electrodeposited MnO2 thin film electrodes and gel-type electrolyte
000489 (2008) Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes : A new approach
000733 (2007) A 200-GHz true E-mode low-noise MHEMT
000840 (2006) Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices
000870 (2005) Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
000954 (2005) High performances of InP channel power HEMT at 94 GHz
000D60 (2003) Growth of anodic oxides on n-InP studied by electrochemistry and surface analysis. Correlation between oxidation methods and passivating properties
001370 (2000) Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
001458 (2000) Electrochemical and 119Sn Mössbauer study of sulfospinels as anode materials for lithium-ion batteries
001610 (1999-01) Fabrication, Caractérisation et Modélisation des Transistors Bipolaires à Double Hétérojonction InP pour Circuits de Communications Optiques à très Hauts Débits (40 Gbit/s)

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Electrical characteristic" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Electrical characteristic" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Electrical characteristic
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024