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List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000093 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000487 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000808 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000E42 (2002-08-05) Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments
001052 (2002) A biperiodic interfacial pattern of misfit dislocation interacting with both free surfaces of a thin bicrystalline sandwich
001349 (2000-02) L'APPROCHE PARAMORPHIQUE : UN NOUVEAU PROCEDE POUR L'HETEROEPITAXIE DE MATERIAUX IDEALEMENT RELAXES. APPLICATION A LA CROISSANCE DE InGaAs ON InP SUBSTRATE
001630 (1999) X-ray structure investigation of lateral surface nanostructures : a full quantitative analysis of non-uniform lattice strain
001637 (1999) Topographic effect of the misfit dislocation dissociation in threefold symmetry epitaxial systems
001658 (1999) Strain relaxation at cleaved surfaces studied by atomic force microscopy
001710 (1999) Investigation of strain induced patterning in superlattices by grazing incidence diffraction: comparison of morphological and strain ordering
001749 (1999) Elastic stress relaxation in GaInAsP quantum wires on InP
001952 (1998) Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy
001987 (1998) Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers
001C50 (1997) Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
002548 (1993) Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices
002684 (1993) Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells
002D49 (1988) Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers
002F38 (1987) Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: application to immiscible III-V alloys

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