Serveur d'exploration sur l'Indium - Analysis (France)

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Effective Hamiltonian < Effective mass < Effective mass model  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]
Ident.Authors (with country if any)Title
000073 (2013) Band parameters of InGaAs/GaAs quantum dots: electronic properties study
000099 (2012) Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
000249 (2011) A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000418 (2009) Modeling of tunnel junctions for current injection in Vertical Cavity Surface Emitting Lasers (VCSELs)
000445 (2009) High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
000458 (2009) Electronic structure properties of the In(Ga)As/GaAs quantum dot-quantum well tunnel-injection system
000864 (2005) Anomalous de Haas-van alphen oscillations in CeCoIn5
000998 (2005) Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime
000A38 (2004-04) Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B59 (2004) Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
000B88 (2004) Alloy effects in Ga1-xInxN/GaN heterostructures
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
000E26 (2002-11-01) Monte Carlo simulation of electron transport in narrow gap heterostructures
000E31 (2002-10-15) Band structures of Ge and InAs: A 20 k.p model
000E66 (2002-05) Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions
000E71 (2002-04-01) Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
001027 (2002) Electric field effects in stacked dots
001071 (2001-10-15) Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2
001456 (2000) Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells

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