Double diffraction < Double heterojunction < Double heterojunction metamorphic high electron mobility transistors

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000A00 (2005)		DC-100-GHz frequency doublers in InP DHBT technology
001519 (1999-11)		METHODOLOGIE DE CONCEPTION DE CIRCUITS INTEGRES HAUT DEBIT EN TECHNOLOGIE TBDH INP POUR LES COMMUNICATIONS OPTIQUES A 40 GB/S
001610 (1999-01)		Fabrication, Caractérisation et Modélisation des Transistors Bipolaires à Double Hétérojonction InP pour Circuits de Communications Optiques à très Hauts Débits (40 Gbit/s)
001B60 (1997)		Propriétés en bruit basse fréquence des DHBT's GaInP/GaAs/GaInP
001D28 (1996-12)		Filière technologique TBH InP/GaInAs pour applications aux systèmes de communications à haut débit
002397 (1994)		High-power low-threshold Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
002535 (1993)		Temperature measurements of telecommunication lasers on a micrometre scale
002627 (1993)		Low threshold injection laser in HgCdTe
002843 (1992)		Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP
002A16 (1991)		Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002A24 (1991)		High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration
002A69 (1991)		Application of AP MOVPE to a new butt-coupling scheme
002C75 (1989)		Extremely low loss InP/GalnAsP RIB waveguides
002D15 (1988)		Diminution des densités de courant de seuil dans le cas d'une structure planaire antiguidante de type GaSb/GaInAsSb/GaSb par adjonction d'une couche métallique
002D90 (1988)		High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates
002E02 (1988)		First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
002E24 (1988)		Characteristic temperature T0 of Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 injection lasers
002E32 (1987)		Préparation d'hétérostructures Ga In As Sb / Ga Sb émettant à 2,5 μm
002E95 (1987)		Pressure-induced elimination of the hole gas in semimetallic GaSb-InAs-GaSb heterostructures
002F03 (1987)		Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures
002F52 (1987)		Analysis of threshold current density in 2•2 μm GaInAsSb/GaAlAsSb.GaSb DH lasers

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