Dislocation structure < Dislocations < Dislocations (crystals)

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000866 (2005)		V-defects and dislocations in InGaN/GaN heterostructures
000A91 (2004)		Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
000B33 (2004)		Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells
000B92 (2004)		Absorption and Raman scattering processes in InN films and dots
000D00 (2003)		Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000E93 (2002)		X-ray scattering from epitaxial GaSb/InAs thin films below and above the critical thickness
000F85 (2002)		Low-load deformation of InP under contact loading; comparison with GaAs
001059 (2001-12-01)		Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001233 (2001)		In-depth deformation of InP under a Vickers indentor
001395 (2000)		Room-temperature plasticity of InAs
001468 (2000)		Deformations induced by a Vickers indentor in InP at room temperature
001571 (1999-05-15)		Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001585 (1999-04)		Optimisation des conditions de croissance et réduction des dislocations dans des monocristaux d'InP élaborés par un procédé Czochralski
001594 (1999-02)		MODES DE CROISSANCE DE NANO-STRUCTURES DE SEMI-CONDUCTEURS III-V OBTENUS PAR EPITAXIE : ETUDES PAR MICROSCOPIE ELECTRONIQUE EN TRANSMISSION
001711 (1999)		Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers
001965 (1998)		On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature
001A61 (1997-11-15)		Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
001B31 (1997-05-05)		Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate
001B39 (1997-04)		Plasticité de InSb à basse température : analyse des microstructures par microscopie électronique en transmission
001B44 (1997-03)		Etude par double et triple diffraction des rayons X et modélisation, de la relaxation des contraintes dans des hétérostructures semiconductrices GaInAs/GaAs et AlInAs/GaAs à rampe de composition graduelle linéaire
001C39 (1997)		Material flow at the surface of indented indium phosphide

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Dislocations" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Dislocations" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Dislocations
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024