Dislocation core < Dislocation density < Dislocation etching

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000125 (2012)		High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys
000219 (2011)		Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000318 (2010)		Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000417 (2009)		Monolithic integration of InP-based transistors on Si substrates using MBE
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000949 (2005)		III-V layer transfer onto silicon and applications
000990 (2005)		Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging
000C95 (2003)		Stress-induced structural changes in thin InAs layers grown on GaAs substrate
000E09 (2003)		A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
000F87 (2002)		Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films
001133 (2001)		Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001371 (2000)		Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates
001454 (2000)		Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
001585 (1999-04)		Optimisation des conditions de croissance et réduction des dislocations dans des monocristaux d'InP élaborés par un procédé Czochralski
001638 (1999)		Thermal stress simulation and interface destabilisation in indium phosphide grown by LEC process
001701 (1999)		Metal organic vapour phase epitaxy of GaN and lateral overgrowth
001848 (1998-07-01)		A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001E19 (1996-04)		Etude du procédé Bridgman vertical appliqué à la croissance de monocristaux semi-conducteurs «trois-cinq» «grand diamètre»
002255 (1994-09)		Hétéroépitaxie de structures contraintes GaxIn1-xAs/InP et de couches InP à faible taux de défauts sur Si par la méthode aux hydrures

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