Disks < Dislocation < Dislocation annihilation

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]

Ident.	Authors (with country if any)	Title
000122 (2012)		In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide
000272 (2010)		Reliability of high voltage/high power L/S-band Hbt technology
000279 (2010)		Plasticity of indium antimonide between -176°C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation
000A54 (2004)		Anisotropie de la relaxation élastique d'un réseau bipériodique de dislocations enterrées : Théorie et application aux bicristaux de semi-conducteurs
000D47 (2003)		Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001D50 (1996-10)		MICRODURETE ET PHOTOPLASTICITE DES SEMICONDUCTEURS : UNE ETUDE COMPARATIVE DES COMPOSES ZnS et GaAs
002548 (1993)		Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices
002622 (1993)		Materials problems for the development of InGaAs/InAlAs HEMT technology
002795 (1992)		Transmission electron microscopy in situ investigation of dislocation mobilities in InP
002919 (1992)		Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy
002A13 (1991)		Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces
002A73 (1991)		A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices
002B90 (1990)		Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements
002C50 (1989)		On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures
002C55 (1989)		Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices
002C60 (1989)		Interactions of In atoms with partial dislocations cores in GaAs: 0.3% In
002C84 (1989)		Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence
002D34 (1988)		The reduction of dislocation density in GaAs by In doping: a specific interaction of In with the cores of 30o partial dislocations
002D44 (1988)		Short range association of EL2 with dislocations in GaAs-In materials
002D78 (1988)		Internal friction study on the mobility of screw dislocations in undoped InSb
002D83 (1988)		Interaction between dislocations and In in-doped GaAs single crystals under high-temperature plastic deformation

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