Depth profile < Depth profiles < Derivative

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000002 (2014)		Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000082 (2012)		Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000093 (2012)		Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000339 (2010)		Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN
000481 (2008)		n-type phosphorus-doped polycrystalline diamond on silicon substrates
000854 (2006)		Characterization of sol-gel derived scintillating LuBO3 films doped with rare earth ions
000884 (2005)		Study of the Mo thin films and Mo/CIGS interface properties
000D03 (2003)		Rigorous analysis of the electronic properties of InP interfaces for gas sensing
000E00 (2003)		Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
001043 (2002)		Band alignment at β-In2S3/TCO interface
001397 (2000)		Recent developments in thin film analysis by SIMS and EPMA
001481 (2000)		Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001642 (1999)		The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001672 (1999)		Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999)		Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001778 (1999)		A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001A32 (1998)		Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998)		A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001D04 (1997)		Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
002079 (1995-01-02)		Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds

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