Density matrix < Density of states < Dental alloy

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000371 (2009)		Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
000379 (2009)		Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg2Si1-xGex Compounds
000503 (2008)		Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well
000603 (2008)		Andreev Reflection versus Coulomb Blockade in Hybrid Semiconductor Nanowire Devices
000910 (2005)		Optical properties of large band gap β-In2S3-3xO3x compounds obtained by physical vapour deposition
001355 (2000-01)		Nouvelle méthode d'investigation par effet Hall des états d'interface dans les composants à base d'hétérostructures III-V
001456 (2000)		Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells
001461 (2000)		Effect of pressure on direct optical transitions of γ-InSe
001745 (1999)		Electrical resistivity and absolute thermoelectric power of liquid indium-nickel-manganese ternary alloys
001D52 (1996-10)		Contribution à la caractérisation des diodes Schottky Oxydées: Application au phosphure d'indium
002366 (1994)		Plasma enhanced chemical vapour deposition of boron nitride onto InP
002424 (1994)		Determination of interface state density on Au/Ta2O5/n-InP structures by different methods
002516 (1993)		Dépôt de nitrure de bore par PECVD pour son utilisation comme isolant de grille dans les structures MISFET sur InP
002773 (1992-03)		Oxydation thermique sous fluor d'InP(100). Application à la passivation des semiconducteurs III-V
002823 (1992)		Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002966 (1991)		Tin oxidation and the electronic structure of SnS-In2S3-SnS2 systems
002984 (1991)		Preparation electrical properties and interface studies of plasma nitride layers on n-type InP
002A76 (1990)		Sulfuration thermique de InP sous pression réduite de vapeur de soufre
002B39 (1990)		Liquid semiconductors
002B68 (1990)		Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3
002D48 (1988)		Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas

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