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Serveur d'exploration sur l'Indium - Analysis (France)

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Deflection < Deformation < Deformation potential  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000111 (2012) Morphology control and growth dynamics of in-plane solid-liquid-solid silicon nanowires
000122 (2012) In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide
000279 (2010) Plasticity of indium antimonide between -176°C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation
000280 (2010) Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation
000971 (2005) Experimental study of the solid-liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth
001511 (1999-12) Strain relaxation in surface nano-structures studied by X-ray diffraction methods
001598 (1999-02) Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
001A87 (1997-09-15) Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties
001F05 (1996) Material flow under an indentor in indium phosphide
002350 (1994) Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002570 (1993) Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
002602 (1993) On the formation of extended stacking faults with extrinsic character in deformed indium phosphide
002857 (1992) Intrinsic strain at slightly mismatched InGaAs/InP interfaces as studied by transmission electron microscopy
002975 (1991) Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001)
002B70 (1990) Electron transport properties of strained InxGa1-xAs
003010 (1986) Luminescence investigations of highly strained-layer InAs-GaAs superlattices
003022 (1986) Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate
003072 (1985) Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells

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