Defect recombination < Defect states < Defect structure

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List of bibliographic references

Number of relevant bibliographic references: 41.
[0-20] [0 - 20][0 - 41][20-40]

Ident.	Authors (with country if any)	Title
000043 (2013)		Modeling of Dark Current in HgCdTe Infrared Detectors
000238 (2011)		Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000285 (2010)		Performance and defects in phosphorescent organic light-emitting diodes
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000613 (2007)		Transport mechanism and trap distribution in ITO/azo-calix[4]arene derivative/al diode structure
000750 (2006)		Transport mechanisms in tris(8-hydroxyquinoline)aluminium (Alq3) electronic layers : a study by photodipolar absorption
000794 (2006)		Nitrogen-doped diamond : Thermoluminescence and dosimetric applications
000804 (2006)		Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000816 (2006)		InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
000845 (2006)		Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
000D14 (2003)		Photo-induced transient spectroscopy of defect levels in GaInNAs
000E49 (2002-07-01)		Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells
000E58 (2002-06-03)		Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
001001 (2002)		Implant and characterization of highly concentrated Fe deep centers in InP
001072 (2001-10-15)		Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy
001107 (2001-04-15)		Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
001262 (2001)		Effect of InSb buffer layer in MIS structures based on InP
001305 (2000-11-06)		Red electroluminescence in Si+-implanted sol-gel-derived SiO2 films
001334 (2000-05-01)		Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
001342 (2000-03-13)		Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001430 (2000)		Interface redox engineering of Cu(In, Ga)Se2-based solar cells : oxygen, sodium, and chemical bath effects

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