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Serveur d'exploration sur l'Indium - Analysis (France)

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Defect formation < Defect level < Defect recombination  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000816 (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B61 (2004) Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers
002694 (1993) Electrical conduction in low temperature grown InP
002695 (1993) Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD
002710 (1993) Defects in electron irradiated GaInP
002756 (1992-11) Contribution à l'étude des défauts DX et EL2 et propriétés de transport dans les structures à plan de dopage GaInAs, GaAs et dans les hétérojonctions InGaAs/AlGaAs, GaInP/GaAs
002785 (1992) Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs
002917 (1992) Defect characterization in GaAlInAs alloys
002927 (1992) Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002A56 (1991) Defects in organometallic vapor-phase epitaxy-grown GaInP layers
002B22 (1990) Optical properties of the main electron-irradiation-induced defects in p-type InP : comparison with calculations for the isolated and acceptor-paired phosphorus vacancy
002B77 (1990) Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors
002B91 (1990) Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: defect transformation (H4-E11)→H′4
002C70 (1989) Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: a charge-controlled bistable model
002E90 (1987) Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
002E94 (1987) Properties of InP doped with Led ions
002F55 (1987) A study of the chemical oxide/InP interface by deep-level transient spectroscopy

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