Deep level optical spectrometry < Deep level transient spectrometry < Deep level transient spectroscopy

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List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000285 (2010)		Performance and defects in phosphorescent organic light-emitting diodes
000550 (2008)		Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
001795 (1998-12)		ETUDE DES EFFETS PARASITES DANS LES TRANSISTORS A EFFET DE CHAMP A HETEROJONCTION (HFET) SUR SUBSTRAT InP
001852 (1998-07)		Caractérisation électrique du quaternaire (Ga0.47 In0.53As)1-x (Al0.48In0.52As)x (x=30%) et Application au transistor HFET pour la photodétection à 1,3-1.55μm.
001B09 (1997-07)		CONTRIBUTION A L'AMELIORATION DE METHODES DE CARACTERISATIONS ELECTRIQUES DE STRUCTURES MIS (Au/BN/InP) ET MOS
002458 (1993-12)		Préparation et études des couches minces d'oxynitrure de phosphore (PON). Applications à la réalisation des structures mis sur InP
002610 (1993)		New method of deep level transient spectroscopy analysis : a five emission rate method
002710 (1993)		Defects in electron irradiated GaInP
002824 (1992)		Passivation induced deep levels in GaInAs PIN planar photodiodes
002917 (1992)		Defect characterization in GaAlInAs alloys
002963 (1991)		Tunnel deep level transient spectroscopy on a single quantum well
002A37 (1991)		Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface
002A56 (1991)		Defects in organometallic vapor-phase epitaxy-grown GaInP layers
002A71 (1991)		Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy
002A72 (1991)		A review of the band offsets measurements in the GaAs/Ga0.49In0.51P system
002B52 (1990)		Identification of the Fe acceptor llevel in Ga0.47In0.53As
002D22 (1988)		Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS
002E15 (1988)		Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type InP
002E34 (1987)		Dépôts en couches épaisses de InGaP en InGaAlP sur GaAs ; étude des hétérostructures ; étude du dopage
002E90 (1987)		Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
002F14 (1987)		InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

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