DH lasers < DLTS < DNA

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000162 (2011)		Systematic study of the complex structure of N1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions
000238 (2011)		Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000285 (2010)		Performance and defects in phosphorescent organic light-emitting diodes
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000406 (2009)		Relation between photocurrent and DLTS signals observed for quantum dot systems
000497 (2008)		Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000845 (2006)		Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
000D33 (2003)		Metastability effects in InGaP solar cells
000E36 (2002-09-01)		Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
000E49 (2002-07-01)		Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells
000E76 (2002-02-15)		Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
000F91 (2002)		Irradiation-induced degradation in solar cell: characterization of recombination centres
001036 (2002)		Compared rapid thermal annealing procedures of InP
001072 (2001-10-15)		Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy
001107 (2001-04-15)		Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
001334 (2000-05-01)		Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
001396 (2000)		Recombination centers in electron irradiated GaInP : application to the degradation of space solar cells
001766 (1999)		Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well
001A14 (1998)		Electrical properties of MIS structures with BN insulating layer

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