Cytosine < Czochralski method < DA converter

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000610 (2007)		Yb3+-Doped CaF2 Cubic Fluoride Crystal : Spectroscopic Properties, Concentration Quenching Analysis and Laser Optimization
000990 (2005)		Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging
000E09 (2003)		A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
000F81 (2002)		Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process
001585 (1999-04)		Optimisation des conditions de croissance et réduction des dislocations dans des monocristaux d'InP élaborés par un procédé Czochralski
001638 (1999)		Thermal stress simulation and interface destabilisation in indium phosphide grown by LEC process
002137 (1995)		Photo-induced changes of hydrogen bonding in semi-insulating iron-doped indium phosphide
002376 (1994)		Mixed cells in directional solidification of In-doped GaAs ; cellular profile and shape-induced stresses
002502 (1993-02)		Etude spectroscopique des complexes de l'hydrogène dans le phosphure d'indium semi(isolant et le phosphure d'indium de type p
002739 (1993)		Back-reflection topographic study of mixed cells in LEC-grown GaAs 0.2 at.% In
002960 (1991)		Unintentional hydrogen incorporation in crystals
002A14 (1991)		Inhomogeneity in a semi-insulating indium phosphide ingot
002A37 (1991)		Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface
002B81 (1990)		Determination of H,C,N, and O in indium phosphide by secondary-ion mass spectrometry
002C84 (1989)		Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence
002D34 (1988)		The reduction of dislocation density in GaAs by In doping: a specific interaction of In with the cores of 30o partial dislocations
002D44 (1988)		Short range association of EL2 with dislocations in GaAs-In materials
002E13 (1988)		Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates
002E61 (1987)		X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals
002E94 (1987)		Properties of InP doped with Led ions
002F96 (1986)		Residual sulphur and silicon doping in InP and GaInAs

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