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Serveur d'exploration sur l'Indium - Analysis (France)

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Current fluctuations < Current gain < Current injection  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000027 (2013) Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
000028 (2013) Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000179 (2011) Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000204 (2011) Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
000258 (2010) Thermal aging model of InP/InGaAs/InP DHBT
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001984 (1998) Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar Transistor
002549 (1993) Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002845 (1992) Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation
002851 (1992) Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
002A47 (1991) Electrical and structural characterization of GaAs on InP grown by OMCVD ; application to GaAs MESFETs
002B51 (1990) Improving the characteristics of InAlAs/InGaAs heterojunction bipolar transistors by employing thin base and collector layers
002B58 (1990) Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

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