Crystal growth from solutions < Crystal growth from vapors < Crystal growth methods

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List of bibliographic references

Number of relevant bibliographic references: 155.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000106 (2012)		Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000369 (2009)		ZrO2-In2O3 thin layers with gradual ionic to electronic composition synthesized by atomic layer deposition for SOFC applications
000666 (2007)		MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000669 (2007)		Interface analysis of InAs/GaSb superlattice grown by MBE
000672 (2007)		Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
000758 (2006)		Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
000768 (2006)		Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000794 (2006)		Nitrogen-doped diamond : Thermoluminescence and dosimetric applications
000827 (2006)		Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000861 (2006)		Admittance spectroscopy of cadmium free GIGS solar cells heterointerfaces
000866 (2005)		V-defects and dislocations in InGaN/GaN heterostructures
000902 (2005)		Physico-chemical characterisation of Cu(In,Al)Se2 thin film for solar cells obtained by a selenisation process
000929 (2005)		Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000934 (2005)		Material analysis of PVD-grown indium sulphide buffer layers for Cu(In,Ga)Se2-based solar cells
000935 (2005)		MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
000953 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000955 (2005)		High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
000963 (2005)		GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000968 (2005)		Feasibility of III-V on-silicon strain relaxed substrates
000976 (2005)		Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A12 (2005)		Cadmium sulfide/indium phosphide as a model system for understanding indium related chemical reactivity at CIGS/CDS interface : XPS and ex situ luminescence investigations

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