Serveur d'exploration sur l'Indium - Analysis (France)

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Crystal face < Crystal faces < Crystal field  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000082 (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000305 (2010) Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering
000318 (2010) Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000506 (2008) Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates
000D02 (2003) Role of cadmium on epitaxial growth of PbSe on InP single crystals
000D24 (2003) New electronic surface states on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface
000F04 (2002) Substrate disruption and surface segregation for Fe/InAs(001)
001008 (2002) Growth morphology of (1 x 2) α-sn(100): a surface diffraction study
001023 (2002) Epitaxial electrodeposition of lead telluride films on indium phosphide single crystals
001051 (2002) A combined RHEED and photoemission comparison of the GaP and InP(0 0 1) (2 × 4) surface reconstructions
001131 (2001) X-ray magnetic circular dichroism, photoemission and RHEED studies of Fe/InAs(100) interfaces
001212 (2001) Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
001253 (2001) Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface
001254 (2001) Electrodeposition of CdSe on GaAs and InP substrates
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
001457 (2000) Electrodeposition of PbSe epitaxial films on (111) InP
002256 (1994-09) Etude par photoémission des surfaces (111) et (110) imparfaites de silicium

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