Crystal defect level < Crystal defects < Crystal detector

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000002 (2014)		Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000142 (2012)		A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
000231 (2011)		Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
000300 (2010)		Low-Temperature Transport Properties of InxFeyCo4-ySb12
000342 (2010)		Crystal Phase Engineering in Single InAs Nanowires
000719 (2007)		Boron-doped diamond - : Grained Mott's metal revealing superconductivity
000A21 (2005)		Ab initio investigation of potential indium and gallium free chalcopyrite compounds for photovoltaic application
000A59 (2004)		Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000B31 (2004)		Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000D90 (2003)		Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000E93 (2002)		X-ray scattering from epitaxial GaSb/InAs thin films below and above the critical thickness
001023 (2002)		Epitaxial electrodeposition of lead telluride films on indium phosphide single crystals
001365 (2000)		Papers presented at the 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semiconductors for Photovoltaics
001380 (2000)		Structural and photoluminescence study of the quaternary alloys system CuIn(SxSe1-x)2
001403 (2000)		Polycrystalline CuInSe2 thin films synthesized by microwave irradiation
001534 (1999-09-15)		Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials
001755 (1999)		Defect chemistry in CdTe crystals
001827 (1998-10)		Analyse quantitative de la relaxation des contraintes à l'échelle atomique, par traitement d'images de microscopie électronique «Haute Résolution», dans des hétérostructures quantiques III-V et II-VI fortement désadaptées
001C19 (1997)		Procedure to minimize interface-state errors in MIS doping profile determinations
001C89 (1997)		Device-relevant point defects in GaAs and InP
001D04 (1997)		Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

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