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Serveur d'exploration sur l'Indium - Analysis (France)

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Crystal chemistry < Crystal defect < Crystal defect density  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
001795 (1998-12) ETUDE DES EFFETS PARASITES DANS LES TRANSISTORS A EFFET DE CHAMP A HETEROJONCTION (HFET) SUR SUBSTRAT InP
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002926 (1992) Characterization of the single phase region with spinel structure in the ternary system In2S3-FeS-FeS2
002974 (1991) Study of CuCaxIn1-xSe2 and CuGaxIn1-xTe2 compounds
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002B64 (1990) Evidence of monodimensional clusters in some fluorite-type anion-excess solid solutions : correlation between vacancies and interstitial fluorine anions
002D44 (1988) Short range association of EL2 with dislocations in GaAs-In materials
002E61 (1987) X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals
002F00 (1987) Observation of cellular structures of defects in semi-insulating InP-Fe
002F23 (1987) Fast neutron-induced defects in undoped and iron-doped indium phosphide
002F26 (1987) Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomography
002F27 (1987) Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures
002F31 (1987) Electronically stimulated deep-center reactions in electron-irradiated InP: comparison between experiment and recombination-enhancement theories
002F43 (1987) Defect structures in InP crystals by laser scanning tomography
002F55 (1987) A study of the chemical oxide/InP interface by deep-level transient spectroscopy
003004 (1986) Photoluminescence studies on the layer semiconductor In2Se3
003009 (1986) Luminescence of heavily electron irradiated InP
003045 (1986) An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP
003114 (1984) Improvement of growth parameters for Brigman-grown InSe crystals

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