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Continuity equations < Continuous wave < Continuous wave lasers  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000176 (2011) Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
000286 (2010) Overview of the EU FP7-project HISTORIC
000328 (2010) Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
000422 (2009) MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
000708 (2007) Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000713 (2007) Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000865 (2005) Vertical Cavity Surface Emitting Laser sources for gas detection
000953 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000B21 (2004) Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm
000B44 (2004) High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
000D07 (2003) Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001044 (2002) Anti-stokes photoluminescence in self-assembled InAs/GaAs quantum dots
001434 (2000) InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
001911 (1998) Undercut ridge structures : A novel approach to 1.3/1.55μm vertical-cavity lasers designed for continuous-wave operation
002567 (1993) Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE

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