Conduction band < Conduction bands < Conduction electron

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List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000081 (2012)		Why MnIn2O4 spinel is not a transparent conducting oxide?
000349 (2010)		Characterization of (In1-xAlx)2S3 thin films grown by co-evaporation
000497 (2008)		Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000639 (2007)		Performance of Culn1-XGaxSe2/(PVD)In2S3 solar cells versus gallium content
000692 (2007)		Effects of a shell on the electronic properties of nanowire superlattices
000696 (2007)		Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000A31 (2004-05-03)		Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000B12 (2004)		Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN
000B31 (2004)		Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000C02 (2003-12-15)		Insulating states of a broken-gap two-dimensional electron-hole system
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C65 (2003-01-01)		Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
000C74 (2003)		Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
000E59 (2002-06-01)		Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
001043 (2002)		Band alignment at β-In2S3/TCO interface
001071 (2001-10-15)		Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2
001095 (2001-06-15)		Luttinger-like parameter calculations
001108 (2001-04-01)		Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
001366 (2000)		X-ray absorption near-edge structure of CuInSe2 crystals
001552 (1999-07-01)		Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y

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