Concentration < Concentration distribution < Concentration effect

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000116 (2012)		Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000206 (2011)		Investigation of Cu(In,Ga)Se2/In2S3 diffuse interface by Raman scattering
000235 (2011)		Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
000326 (2010)		Electrochemical oxidation of primary amine in ionic liquid media: Formation of organic layer attached to electrode surface
000369 (2009)		ZrO2-In2O3 thin layers with gradual ionic to electronic composition synthesized by atomic layer deposition for SOFC applications
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000685 (2007)		Environmental impacts of heavy metal discharges from a smelter in Deûle-canal sediments (Northern France) : Concentration levels and chemical fractionation
000854 (2006)		Characterization of sol-gel derived scintillating LuBO3 films doped with rare earth ions
000B10 (2004)		Nanoscale EELS analysis of InGaN/GaN heterostructures
000C90 (2003)		Studies of buried interfaces Cu(In, Ga)Se2/CdS XPS and electrical investigations
000E09 (2003)		A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
001227 (2001)		Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study
001272 (2001)		Comparative models for diffusion of Be in InGaAs/InP heterostructures
001285 (2001)		A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
001710 (1999)		Investigation of strain induced patterning in superlattices by grazing incidence diffraction: comparison of morphological and strain ordering
001D04 (1997)		Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001F65 (1996)		Chemical modification of fluoride glass surface
001F91 (1995-12)		Modélisation de la diffusion du Be dans les structures épitaxiales en InGaAs pour les dispositifs microoptoélectroniques
002016 (1995-10)		Effets d'interdiffusion sur les hétérostructures III-V
002562 (1993)		Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers
002623 (1993)		Mapping of dopant concentrations in photorefractive InP : Fe wafers : Physique du traitement des faisceaux lumineux et des images

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