Compression test < Compressive stress < Computation code

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List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000042 (2013)		Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000536 (2008)		Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes
000570 (2008)		High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line
000654 (2007)		Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000820 (2006)		High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
000860 (2006)		Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000943 (2005)		Interfacial structure of MBE grown InN on GaN
000A76 (2004)		Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system
000B79 (2004)		Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000D72 (2003)		Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000F18 (2002)		Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
001209 (2001)		MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001750 (1999)		Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch
001777 (1999)		A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs
001B93 (1997)		Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates
001C50 (1997)		Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP
001C65 (1997)		High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
001C68 (1997)		High performance 1.3 μm SLMQW BRS lasers for 85°C operation
001D54 (1996-10)		Contribution à l'optimisation de structures lasers à puits quantiques contraints sur InP, à base des systèmes GaInAsP/GaInAsP/InP et GaInAs/GaInAlAs/InP. Applications aux télécommunications optiques
001E88 (1996)		Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide. 2. S doped InP
001F73 (1996)		Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension

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