Serveur d'exploration sur l'Indium - Analysis (France)

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Charge carrier mobility < Charge carrier recombination < Charge carrier scattering  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]
Ident.Authors (with country if any)Title
000124 (2012) Impedance spectrometry of optimized standard and inverted P3HT-PCBM organic solar cells
000212 (2011) Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds
000268 (2010) Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000717 (2007) Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
000787 (2006) Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures
000923 (2005) Non-empirical prediction of solar cell degradation in space
000D16 (2003) Optimization, design and fabrication of a non-cryogenic quantum infrared detector
001040 (2002) Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions
001041 (2002) Blue light emitting diodes with bathocuproine layer
001146 (2001) Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs
001168 (2001) Radiation-induced defects in solar cell materials
001208 (2001) MBE growth of room-temperature InAsSb mid-infrared detectors
001295 (2000-12) «CARACTÉRISATION DES CENTRES DE RECOMBINAISON NON-RADIATIFS DANS LES SEMICONDUCTEURS»
001765 (1999) Carrier capture in InGaN quantum wells and hot carrier effects in GaN
002736 (1993) Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002851 (1992) Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
002876 (1992) InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range
002988 (1991) Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film
002A79 (1990) Passivation des semiconducteurs III-V
002B32 (1990) Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

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