List of bibliographic references
Number of relevant bibliographic references: 36.
[0-20] [
0 - 20][
0 - 36][
20-35][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000023 (2013) |
| Spatial modulation of above-the-gap cathodoluminescence in InP nanowires |
| 000025 (2013) |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE |
| 000172 (2011) |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth |
| 000319 (2010) |
| GaN-based nanowires: From nanometric-scale characterization to light emitting diodes |
| 000321 (2010) |
| Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates |
| 000350 (2010) |
| Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching |
| 000392 (2009) |
| Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells |
| 000481 (2008) |
| n-type phosphorus-doped polycrystalline diamond on silicon substrates |
| 000894 (2005) |
| Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities |
| 000A11 (2005) |
| Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells |
| 000A41 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000B15 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000B37 (2004) |
| Indentation punching through thin (011) InP |
| 000B61 (2004) |
| Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers |
| 000B62 (2004) |
| Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis |
| 000D82 (2003) |
| Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers |
| 000D98 (2003) |
| Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire |
| 001010 (2002) |
| Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers |
| 001436 (2000) |
| In-depth structure of rosette arms in indium phosphide |
| 001478 (2000) |
| Cathodoluminescent properties of coated SrGa2S4:Eu2+ and ZnS:Ag, Cl phosphors for field emission display applications |
| 001E89 (1996) |
| Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n+-InP substrate |
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