Carrier mean free path < Carrier mobility < Carrier relaxation time

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000142 (2012)		A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
000300 (2010)		Low-Temperature Transport Properties of InxFeyCo4-ySb12
000461 (2009)		Effect of pressure on electrical properties of short period InAs/GaSb superlattice
000535 (2008)		Negative mobility dependence on electric field in poly(3-alkylthiophenes) evidenced by the charge extraction by linearly increasing voltage method
000653 (2007)		Negative mobility dependence in polythiophenes P3OT and P3HT evidenced by the charge extraction by linearly increasing voltage method
000667 (2007)		Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000858 (2006)		Ambipolar lateral diffusion of photo-induced carriers in a moderate magnetic field
000928 (2005)		Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN
000982 (2005)		Electrical properties of doped 3-tetradecylpolypyrrole/metal devices
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000B51 (2004)		Free-carrier grating and terahertz generation from InN n+nn+ structures under streaming plasma instability
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
000F94 (2002)		Influence of tin doping on the structural and physical properties of indium-zinc oxides thin films deposited by pulsed laser deposition
001114 (2001-03-12)		Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001211 (2001)		Linear temperature dependence of mobility in quantum wells and the effects of exchange and correlation
001364 (2000)		Caractérisation électrique et optique du diseleniure de cuivre et d'indium
001390 (2000)		Sodium mobility in the NASICON series Na1+xZr2-xInx(PO4)3
001598 (1999-02)		Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
001599 (1999-02)		InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance
001634 (1999)		Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001747 (1999)		Electrical characterization of InP epitaxial layers using mobility spectrum technique

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