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Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000043 (2013) Modeling of Dark Current in HgCdTe Infrared Detectors
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000630 (2007) Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots
000870 (2005) Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
000A09 (2005) Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application
000B99 (2003-12-29) Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
000E58 (2002-06-03) Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
000E76 (2002-02-15) Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
001121 (2001-02-15) Influence of Zinc Co-Doping on Carbon Doped InGaAs
001208 (2001) MBE growth of room-temperature InAsSb mid-infrared detectors
001334 (2000-05-01) Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
001415 (2000) Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
001597 (1999-02) New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
001601 (1999-02) High-quality InGaAsN growth by metalorganic vapor-phase epitaxy using nitrogen carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors
001885 (1998-02-16) Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells
001886 (1998-02-15) Optically induced nuclear magnetic field in InP

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