Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Carrier concentration »
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List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000B78 (2004) Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000D59 (2003) High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
000D78 (2003) Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
001011 (2002) Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates - Application to O3 and NO2 monitoring in urban ambient air
001413 (2000) Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001999 (1998) High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
001F04 (1996) Modeling of microwave top illuminated PIN photodetector under very high optical power

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