Serveur d'exploration sur l'Indium - Analysis (France)

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List of bibliographic references

Number of relevant bibliographic references: 255.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000000 (2014) Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
000005 (2014) Backgating effect in III-V MESFET's: A physical model
000019 (2013) Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
000028 (2013) Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
000030 (2013) Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000083 (2012) Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
000137 (2012) Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000148 (2011) Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management
000179 (2011) Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000186 (2011) Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method
000204 (2011) Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
000210 (2011) InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
000211 (2011) Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000258 (2010) Thermal aging model of InP/InGaAs/InP DHBT
000269 (2010) Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
000277 (2010) Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
000294 (2010) Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
000319 (2010) GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

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