Beryllium addition < Beryllium additions < Beryllium ions

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000583 (2008)		Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000D83 (2003)		Determination of beryllium and self-interstitial diffusion parameters in InGaAs
000E00 (2003)		Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
001045 (2002)		Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001272 (2001)		Comparative models for diffusion of Be in InGaAs/InP heterostructures
001286 (2001)		A model for diffusion of beryllium in InGaAs/InP heterostructures
001481 (2000)		Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001482 (2000)		Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001642 (1999)		The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001665 (1999)		Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999)		Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001723 (1999)		Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001768 (1999)		Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001778 (1999)		A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001985 (1998)		Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A31 (1998)		Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A32 (1998)		Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998)		A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B26 (1997-06)		Etude magnéto-optique dans le proche infrarouge de systèmes bidimensionnels élaborés à partir d'alliages II-VI ou III-V
001B78 (1997)		p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium

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