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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Bandwidth »
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Bandpass capacitor < Bandwidth < Barium  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000076 (2013) 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
000176 (2011) Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
000859 (2006) All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity
000B95 (2004) 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
001032 (2002) DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001219 (2001) Integrated laser Mach-Zehnder modulator on indium phosphide free of modulated-feedback
001510 (1999-12) CARACTERISATION DE COUCHES MINCES DE CuGaSe2 OBTENUES PAR «MOCVD»
001B81 (1997) Very high-frequency small-signal equivalent circuit for short gate-length InP HEMT's
001C44 (1997) Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
001C55 (1997) InP/InGaAs double-HBT technology for high bit-rate communication circuits
001C56 (1997) InP/GaInAsP &pgr;-phase-shifted Mach-Zehnder modulator for wavelength independent (1530-1560 nm) propagation performance at 10 Gbit/s over standard dispersive fibre
001F08 (1996) Low noise 20Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers
002212 (1995) Active lossless monolithic one-by-four splitters/combiners using optical gates on InP
002218 (1995) 8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002875 (1992) InGaAsP/InGaAsP Multiple quantum-well modulator with improved saturation intensity and bandwidth over 20 GHz
002A24 (1991) High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration

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