Band model of magnetism < Band offset < Band pass filter

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 55.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000073 (2013)		Band parameters of InGaAs/GaAs quantum dots: electronic properties study
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
000355 (2010)		Band structure at heterojunction interfaces of GaInP solar cells
000532 (2008)		New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
000639 (2007)		Performance of Culn1-XGaxSe2/(PVD)In2S3 solar cells versus gallium content
000649 (2007)		Numerical simulation of CuInxGa1-xSe2 solar cells by AMPS-1D
000733 (2007)		A 200-GHz true E-mode low-noise MHEMT
000787 (2006)		Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures
000A96 (2004)		Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B12 (2004)		Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN
000B88 (2004)		Alloy effects in Ga1-xInxN/GaN heterostructures
001043 (2002)		Band alignment at β-In2S3/TCO interface
001138 (2001)		Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001177 (2001)		Photoemission study of the ITO/triphenylene/perylene/Al interfaces
001608 (1999-01)		PHOTOLUMINESCENCE D'HÉTÉROSTRUCTURES GaAs/Ga0.51In0.49P : ÉTUDE DES ÉCHANGES ARSENIC/PHOSPHORE
001661 (1999)		Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus
001766 (1999)		Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well
001852 (1998-07)		Caractérisation électrique du quaternaire (Ga0.47 In0.53As)1-x (Al0.48In0.52As)x (x=30%) et Application au transistor HFET pour la photodétection à 1,3-1.55μm.
001921 (1998)		Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001A13 (1998)		Electro-absorption modulator using a type-II quantum well in the InxGa1-xAs/InAlAs/InP system
001A69 (1997-11)		ETUDES DES PROPRIETES OPTIQUES DE PUITS QUANTIQUES InGaAs/GaAs ET DE SUPERRESEAUX GaAs/AlAs ELABORES SUR PSEUDOSUBSTRAT InGaAs

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