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Index « Keywords » - entrée « Auger electron spectrometry »
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Auger electron spectra < Auger electron spectrometry < Auger electron spectroscopy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]
Ident.Authors (with country if any)Title
001796 (1998-12) ELABORATION D'HETEROSTRUCTURES A BASE D'ANTIMONIURES. ETUDE ET OPTIMISATION DE LA FORMATION DES INTERFACES InAs/GaSb ET GaSb/InAs
001F90 (1995-12) Nettoyage de surface de l'InP(100) et étude de l'adsorption du tertiarybutylphosphine par spectroscopie Auger et spectroscopie infrarouge de surface
002125 (1995) Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces
002689 (1993) Electroless Ni as a refractory ohmic contact for n-InP
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
002922 (1992) Contribution of EPES in the study of materials
002929 (1992) Can oxidation prevent nucleation studies of indium cluster deposition in a classical vacuum system ?
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002C53 (1989) Modifications of InP(110) surfaces induced by electron beam during Auger measurement
002D02 (1988) Sulfuration du phosphure d'indium et caractérisations électrochimiques
002D17 (1988) Croissance de Si3N4 sur GaAs et InP par pulvérisation réactive par faisceau d'ions
002D36 (1988) Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
002D43 (1988) Silver on phosphorus-passivated (100) InP. Interface formation and microstructure
002D80 (1988) Interaction of atomic hydrogen with cleaved InP. I: The adsorption stage
002D81 (1988) Interaction of atomic hydrogen with cleavage InP. II: The decomposition stage
002F53 (1987) An AES and ELS study of InP(100) surface subjected to argon ion bombardment
002F83 (1986) The first steps of the sulfurization of III-V compounds
003026 (1986) Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces
003036 (1986) Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel
003057 (1985) Etats électroniques à l'interface isolants GaInAsP

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