Serveur d'exploration sur l'Indium - Analysis (France)

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Atomistic model < Auger effect < Auger electron spectra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000717 (2007) Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
000724 (2007) Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
000E46 (2002-07-15) Auger recombination in narrow-gap semiconductor superlattices
000E58 (2002-06-03) Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
001119 (2001-02-15) Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In1-xAlxAs/InP
001504 (1999-12-01) Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers
001574 (1999-05-10) Phonon-assisted capture and intradot Auger relaxation in quantum dots
001712 (1999) Intra-dot Auger relaxation in quantum dots
001899 (1998-01) Erratum: Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization [J. Vac. Sci. Technol. B 15, 1008 (1997)]
001B11 (1997-07) Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
002241 (1994-10-24) High-efficiency energy up-conversion by an ''Auger fountain'' at an InP-AlInAs type-II heterojunction

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