Anions < Anisotropy < Annealing

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]

Ident.	Authors (with country if any)	Title
000113 (2012)		Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000197 (2011)		MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides
000208 (2011)		Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission
000336 (2010)		Direct Observation of Acoustic Oscillations in InAs Nanowires
000466 (2009)		Crystal growth and characterization of two-leg spin ladder compounds: Sr14Cu24O41 and Sr2Ca12CU24O41
000542 (2008)		Location of deuteron sites in the proton conducting perovskite BaZr0.50In0.50O3-y
000567 (2008)		Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials : Ultimate integration on silicon conference 2007
000589 (2008)		Demonstration of planar thick InP layers by selective MOVPE
000602 (2008)		Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots
000612 (2007)		Unusual Hall effect in quasi two-dimensional strongly correlated metal CeCoIn5
000617 (2007)		Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000645 (2007)		Optical characterizations of complete TFT-LCD display devices by phase modulated spectroscopic ellipsometry
000716 (2007)		Cation ordering in the fluorite-like transparent conductors In4+xSn3- 2xSbxO12 and In6TeO12
000724 (2007)		Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
000853 (2006)		Chemically prepared well-ordered InP(001) surfaces
000921 (2005)		Observation of structural anisotropy and the onset of liquidlike motion during the nonthermal melting of InSb
000995 (2005)		Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation
000A54 (2004)		Anisotropie de la relaxation élastique d'un réseau bipériodique de dislocations enterrées : Théorie et application aux bicristaux de semi-conducteurs
000A56 (2004)		Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
000B84 (2004)		Anisotropic transport properties measured in HoMn6Ge6 single crystals
000C87 (2003)		Surface and self-organisation of III-V thin films for optoelectronics: Influence of surface orientation and strain on growth mechanisms

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