Serveur d'exploration sur l'Indium - Analysis (France)

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Ambient air concentration < Ambient temperature < Ambipolar diffusion  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]
Ident.Authors (with country if any)Title
000011 (2013) Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000149 (2011) Toward a single-chip TECless and NUCless InGaAs SWIR Camera with 120dB Intrinsic Operation Dynamic Range
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000270 (2010) Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000274 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
000312 (2010) High-index-contrast subwavelength grating VCSEL
000325 (2010) Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000328 (2010) Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
000384 (2009) The effect of hydrostatic pressure on the operation of quantum cascade lasers
000398 (2009) Slow and fast light in quantum dot based semiconductor optical amplifiers
000460 (2009) Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
000464 (2009) Dynamics of Band-edge Photonic Crystal lasers
000475 (2009) A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000485 (2008) Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation
000505 (2008) Singlemode 1.1 μm InGaAs Quantum Well microstructured Photonic Crystal VCSEL
000561 (2008) InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
000576 (2008) Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000580 (2008) Electrically injected InP microdisk lasers integrated with nanophotonic SOI circuits
000598 (2008) Ballistic nanodevices for high frequency applications
000673 (2007) Influence of sodium compounds at the Cu(In, Ga)Se2/(PVD)In2S3 interface on solar cell properties

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