Aluminium nitride < Aluminium nitrides < Aluminium oxide

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000651 (2007)		Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000672 (2007)		Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
000705 (2007)		Current status of AlInN layers lattice-matched to GaN for photonics and electronics
000745 (2006)		Undoped and rare-earth doped GaN quantum dots on AlGaN
000766 (2006)		Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000799 (2006)		Meta-GGA calculation of the electronic structure of group III-V nitrides
000823 (2006)		Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
000825 (2006)		Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
000894 (2005)		Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
000909 (2005)		Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices
000926 (2005)		Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure
000964 (2005)		First-principles study of cubic AlxGa1-xN alloys
000984 (2005)		Elastic waves at the (001) and (110) surfaces of AlN, GaN and InN
000A11 (2005)		Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells
000A70 (2004)		Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
000D12 (2003)		Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000D67 (2003)		First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys
000D98 (2003)		Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
000F21 (2002)		Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
000F67 (2002)		Monte Carlo calculations of THz generation in wide gap semiconductors
001012 (2002)		GaN epitaxy: How to characterize hazards for the operators

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Aluminium nitrides" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Aluminium nitrides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Aluminium nitrides
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024