Aluminium compound < Aluminium compounds < Aluminium fluorides

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List of bibliographic references

Number of relevant bibliographic references: 79.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000750 (2006)		Transport mechanisms in tris(8-hydroxyquinoline)aluminium (Alq3) electronic layers : a study by photodipolar absorption
000A23 (2004-06-15)		Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations
000A25 (2004-06-01)		Conductance quantization in deep mesa-etched gate-controlled ballistic electron waveguides
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
000A40 (2004-03-29)		High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability
000A46 (2004-02-02)		Single photon emission from site-controlled pyramidal quantum dots
000C16 (2003-09-01)		Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C17 (2003-08-18)		Tunable laser diodes by Stark effect
000C28 (2003-08-04)		Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction
000C29 (2003-07-15)		Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities
000C35 (2003-06-15)		Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000C38 (2003-05-15)		Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000C43 (2003-04-15)		Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KH
000C46 (2003-04-07)		In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C47 (2003-04-01)		Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000C49 (2003-04)		Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000C53 (2003-03-10)		Determination of built-in electric fields in quaternary InAlGaN heterostructures
000C58 (2003-02-15)		Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers
000C61 (2003-02-01)		Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
000C65 (2003-01-01)		Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
000E21 (2002-11-15)		Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields

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