Aluminium alloys < Aluminium antimonides < Aluminium arsenides

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List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000154 (2011)		Theory of g-factor enhancement in narrow-gap quantum well heterostructures
000210 (2011)		InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
000270 (2010)		Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000384 (2009)		The effect of hydrostatic pressure on the operation of quantum cascade lasers
000562 (2008)		InAs-based quantum cascade lasers
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000680 (2007)		Giant intersubband polariton splitting in InAs/AlSb microcavities
000767 (2006)		Structural characterisation of Sb-based heterostructures by X-ray scattering methods
000B21 (2004)		Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm
000B44 (2004)		High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
000D49 (2003)		Indium surface segregation in AlSb and GaSb
001065 (2001-11)		Croissance et caractérisation d'hétérostructures InAs/AlSb/GaSb pour la réalisation de lasers à cascade quantique
001188 (2001)		Optical and structural investigation of InAs/AlSb/GaSb heterostructures
001209 (2001)		MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001275 (2001)		Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
001313 (2000-10)		Réalisation par épitaxie par jets moléculaires d'une nouvelle structure laser III-V émettant à plus de 3 μm
001671 (1999)		Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001731 (1999)		GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
001832 (1998-09)		ÉTUDE ET RÉALISATION DE LASERS À CAVITÉ VERTICALE À 1,55 μm SUR GASB
001F52 (1996)		Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
001F92 (1995-12)		Lasers à injection à Ga0.88 In0.12 As0.10 Sb0.90

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