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Aluminium Indium Arsenides < Aluminium Indium Arsenides Mixed < Aluminium Indium Nitrides Mixed  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]
Ident.Authors (with country if any)Title
000156 (2011) The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots
000238 (2011) Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
002377 (1994) Microwave miniband NDC in GaInAs/AlInAs superlattices
002386 (1994) Low temperature low voltage operation of HEMTs on InP
002413 (1994) Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructures
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002658 (1993) High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature
002678 (1993) Evidences of non-commutativity and non-transivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology
002771 (1992-05) Photodiode Métal-Semiconducteur-Métal (MSM) AlInAs/GaInAs pour transmission sur fibre optique
002788 (1992) band-offset transitivity in strained (001) heterointerfaces
002825 (1992) Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental study
002832 (1992) Observation of laser emission in an InP-AlInAs type II superlattice
002846 (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002878 (1992) In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As

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