Aluminium Gallium Arsenides < Aluminium Gallium Arsenides Mixed < Aluminium Gallium Indium Alloys

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List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]

Ident.	Authors (with country if any)	Title
000156 (2011)		The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots
000221 (2011)		Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
002400 (1994)		High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002500 (1993-02)		Evolution des paramètres électriques dans les TEGFET standards (AlGaAs/GaAs) et pseudomorphiques (AlGaAs/InGaAs/GaAs)-à grille ultra courte
002501 (1993-02)		Etude théorique des couches actives AlGaAs/InGaAs/GaAs à l'aide d'un modèle de résolution autocohérente des équations de Schrodinger et de Poisson
002609 (1993)		Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMT's from 10 Hz to 18 GHz
002615 (1993)		Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors : physical limitations at ultrashort gate length
002684 (1993)		Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells
002685 (1993)		Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields
002756 (1992-11)		Contribution à l'étude des défauts DX et EL2 et propriétés de transport dans les structures à plan de dopage GaInAs, GaAs et dans les hétérojonctions InGaAs/AlGaAs, GaInP/GaAs
002810 (1992)		Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
002819 (1992)		Picosecond large-signal switching characteristics of a pseudomorphic AIGaAs/InGaAs modulated doped field effect transistor
002844 (1992)		Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
002845 (1992)		Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation
002862 (1992)		Innovative passivated heterojunction bipolar transistor grown by CBE
002865 (1992)		Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
002917 (1992)		Defect characterization in GaAlInAs alloys
002A34 (1991)		Fabrication of high-performance AlxGa1-xAs/InyGayAs/GaAs resonant tunneling diodes using a microwave-compatible technology
002A35 (1991)		Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A50 (1991)		Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002B32 (1990)		Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

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